Defect level signatures in CuInSe2 by photocurrent and capacitance spectroscopy
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Abstract
Results of defect levels spectroscopy on epitaxial and polycrystalline CuInSe2 by photocurrent and capacitance methods are presented. Electronic parameters of defect levels found by photocurrent methods are compared with those obtained through the use of capacitance spectroscopy on CuInSe2 solar cells. In the discussion, we include the Meyer-Neldel plot as a method of differentiation between the levels in the case of parameter variation between samples and depending on measurement conditions. The levels common for all compounds from the Cu(In,Ga)Se2 family are specified. The origin of the N1 and N2 defect levels frequently observed in the capacitance spectra of solar cells is discussed and the coincidence of the N2 level and the E4 bulk level is shown.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Defect level signatures in CuInSe<sub>2 </sub>by photocurrent and capacitance spectroscopy</title><author><name sortKey="Krysztopa, A" uniqKey="Krysztopa A">A. Krysztopa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75</s1><s2>00-662 Warszawa</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>00-662 Warszawa</wicri:noRegion></affiliation></author><author><name sortKey="Igalson, M" uniqKey="Igalson M">M. Igalson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75</s1><s2>00-662 Warszawa</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>00-662 Warszawa</wicri:noRegion></affiliation></author><author><name sortKey="G Tay, L" uniqKey="G Tay L">L. G Tay</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill</s1><s2>4422 Belvaux</s2><s3>LUX</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Luxembourg (pays)</country><wicri:noRegion>4422 Belvaux</wicri:noRegion></affiliation></author><author><name sortKey="Larsen, J K" uniqKey="Larsen J">J. K. Larsen</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill</s1><s2>4422 Belvaux</s2><s3>LUX</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Luxembourg (pays)</country><wicri:noRegion>4422 Belvaux</wicri:noRegion></affiliation></author><author><name sortKey="Aida, Y" uniqKey="Aida Y">Y. Aida</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill</s1><s2>4422 Belvaux</s2><s3>LUX</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Luxembourg (pays)</country><wicri:noRegion>4422 Belvaux</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0229280</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0229280 INIST</idno><idno type="RBID">Pascal:13-0229280</idno><idno type="wicri:Area/Main/Corpus">000A98</idno><idno type="wicri:Area/Main/Repository">000F64</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Capacitance</term><term>Chalcopyrite</term><term>Copper</term><term>Copper Indium Selenides Mixed</term><term>Defect level</term><term>Electronic structure</term><term>Epitaxial layers</term><term>Epitaxy</term><term>Gallium</term><term>Photoconductivity</term><term>Photocurrents</term><term>Polycrystals</term><term>Solar cells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Niveau défaut</term><term>Courant photoélectrique</term><term>Photoconductivité</term><term>Capacité électrique</term><term>Epitaxie</term><term>Couche épitaxique</term><term>Structure électronique</term><term>Cellule solaire</term><term>Chalcopyrite</term><term>Cuivre Indium Séléniure Mixte</term><term>Polycristal</term><term>Cuivre</term><term>Gallium</term><term>CuInSe2</term><term>CaSe</term><term>7350P</term><term>7320</term><term>7320A</term><term>8460J</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Results of defect levels spectroscopy on epitaxial and polycrystalline CuInSe<sub>2</sub> by photocurrent and capacitance methods are presented. Electronic parameters of defect levels found by photocurrent methods are compared with those obtained through the use of capacitance spectroscopy on CuInSe<sub>2</sub> solar cells. In the discussion, we include the Meyer-Neldel plot as a method of differentiation between the levels in the case of parameter variation between samples and depending on measurement conditions. The levels common for all compounds from the Cu(In,Ga)Se<sub>2</sub> family are specified. The origin of the N1 and N2 defect levels frequently observed in the capacitance spectra of solar cells is discussed and the coincidence of the N2 level and the E4 bulk level is shown.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>535</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Defect level signatures in CuInSe<sub>2 </sub>by photocurrent and capacitance spectroscopy</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2012 Symposium B</s1></fA09><fA11 i1="01" i2="1"><s1>KRYSZTOPA (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>IGALSON (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>GÜTAY (L.)</s1></fA11><fA11 i1="04" i2="1"><s1>LARSEN (J. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>AIDA (Y.)</s1></fA11><fA12 i1="01" i2="1"><s1>EDOFF (Marika)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>ROMEO (Alessandro)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHEER (Roland)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>SHAFARMAN (William)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75</s1><s2>00-662 Warszawa</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill</s1><s2>4422 Belvaux</s2><s3>LUX</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>366-370</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000504170550810</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>35 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0229280</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Results of defect levels spectroscopy on epitaxial and polycrystalline CuInSe<sub>2</sub> by photocurrent and capacitance methods are presented. Electronic parameters of defect levels found by photocurrent methods are compared with those obtained through the use of capacitance spectroscopy on CuInSe<sub>2</sub> solar cells. In the discussion, we include the Meyer-Neldel plot as a method of differentiation between the levels in the case of parameter variation between samples and depending on measurement conditions. The levels common for all compounds from the Cu(In,Ga)Se<sub>2</sub> family are specified. The origin of the N1 and N2 defect levels frequently observed in the capacitance spectra of solar cells is discussed and the coincidence of the N2 level and the E4 bulk level is shown.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C50P</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C20A</s0></fC02><fC02 i1="03" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Niveau défaut</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Defect level</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Courant photoélectrique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Photocurrents</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Photoconductivité</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Photoconductivity</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Capacité électrique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Capacitance</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Epitaxie</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Epitaxy</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Structure électronique</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Electronic structure</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Solar cells</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>15</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Cuivre Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Copper Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Polycristal</s0><s5>17</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Polycrystals</s0><s5>17</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>18</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>18</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Gallium</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Gallium</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>CaSe</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>7350P</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>7320</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>7320A</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>210</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. Symposium B "Thin Film Chalcogenide Photovoltaic Materials"</s1><s3>Strasbourg FRA</s3><s4>2012-05-14</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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